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  1 infrared light emitting diodes lna2402l glass lens 6.3 0.3 1: anode 2: cathode unit : mm unit : mm 4.6 0.15 glass window 2.54 0.25 1.0 0.2 1.0 0.15 5.75 max. 2- 0.45 0.05 4.5 0.2 12.7 min. 45 3 12 lna2403f 1: anode 2: cathode 4.6 0.15 2.54 0.25 1.0 0.2 1.0 0.15 5.75 max. 2- 0.45 0.05 12.7 min. 45 3 12 ln a 2403 f , lna2402l (ln151f, LN151L) gaas infrared light emitting diodes for optical control systems features high-power output, high-efficiency : p o = 7.5 mw (typ.) fast response and high-speed modulation capability : t r , t f = 1 s (typ.) infrared light emission close to monochromatic light : p = 950 nm (typ.) narrow directivity, suitable for effective use of radiant power (lna2402l (LN151L)) wide directivity, matched for external optical systems (lna2403f (ln151f)) to-18 standard type package absolute maximum ratings (ta = 25?c) parameter symbol ratings unit power dissipation p d 160 mw forward current (dc) i f 100 ma pulse forward current i fp * 2a reverse voltage (dc) v r 3v operating ambient temperature t opr C25 to +100 ?c storage temperature t stg C30 to+100 ?c * f = 100 hz, duty cycle = 0.1 % electro-optical characteristics (ta = 25?c) parameter symbol conditions min typ max unit radiant power p o i f = 100ma 5 7.5 mw peak emission wavelength p i f = 100ma 950 nm spectral half band width ? i f = 100ma 50 nm forward voltage (dc) v f i f = 100ma 1.3 1.6 v reverse current (dc) i r v r = 3v 10 a capacitance between pins c t v r = 0v, f = 1mhz 60 pf rise time t r i fp = 100ma 1 s fall time t f 1 s half-power angle lna2403f the angle in which radiant intencity is 50% 32 deg. lna2402l 8 deg. note ) the part number s in the parenthesis show conventional part numbe r .
2 infrared light emitting diodes lna2403f, lna2402l i f ta 120 100 80 60 40 20 ambient temperature ta (?c ) allowable forward current i f (ma) 0 20406080100 0 C 25 i fp duty cycle 10 2 10 1 10 C1 duty cycle (%) pulse forward current i fp (a) 11010 2 10 C2 10 C1 t w = 10 s ta = 25?c i fp v f 10 3 10 2 10 1 10 C1 forward voltage v f (v) pulse forward current i fp (ma) 10 C2 0 t w = 10 s f = 100hz ta = 25?c 135 24 v f ta 1.6 1.2 0.8 0.4 0 ambient temperature ta (?c ) forward voltage v f (v) C 40 0 40 80 120 ? p o i fp 10 3 10 2 10 1 pulse forward current i fp (ma) relative radiant power ? p o 10 3 10 4 10 2 10 C2 10 C1 110 (1) t w = 10 s duty cycle = 0.1% (2) dc ta = 25?c ? p o ta 10 1 ambient temperature ta (?c ) i f = 50ma relative radiant power ? p o C 40 0 40 80 10 C1 spectral characteristics 100 80 60 40 20 wavelength (nm) relative radiant intensity (%) 850 900 950 1000 1050 1100 0 800 i f = 100ma ta = 25?c 0? 10? 20? 30? 40? 50? 60? 70? 80? 90? directivity characteristics frequency characteristics 10 2 10 1 10 C1 frequency f (khz) modulation output 10 3 10 4 10 2 10 C2 10 ta = 25?c 90 100 80 70 60 50 40 30 2 0 LN151L ln151f (1) (2) i f = 100ma 50ma 10ma ta = 25?c relative radiant intensity(%)
caution for safety danger please read the following notes before using the datasheets a. these materials are intended as a reference to assist customers with the selection of panasonic semiconduc- tor products best suited to their applications. due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. b. panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. therefore, panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. c. these materials are solely intended for a customer's individual use. therefore, without the prior written approval of panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the internet or in any other way, is prohibited. request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. it does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) the products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household ap- pliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (4) the products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. at the final stage of your design, purchasing, or use of the prod- ucts, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifi- cations satisfy your requirements. (5) when designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. otherwise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) when using products for which dry packing is required, observe the conditions (including shelf life and after- unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) no part of this material may be reprinted or reproduced by any means without written permission from our company. gallium arsenide material (gaas) is used in this product. therefore, do not burn, destroy, cut, crush, or chemi- cally decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. observe the relevant laws and regulations when dispos- ing of the products. do not mix them with ordinary in- dustrial waste or household refuse when disposing of gaas-containing products. 2001 mar


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